Characteristics and SPICE simulation of a single - sided , n + on n Si strip detector before and after neutron irradiation
نویسندگان
چکیده
Capacitance, resistance and current measurements were carried out on single-sided, n + on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8:3 10 13 neutron=cm 2. To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. By modelling the setup of the capacitance measurements, our model was able to reproduce the measured frequency dependence of the relevant capacitances both for non-irradiated and irradiated detectors.
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